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Product Detail: FM25L512 (NRND)

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Not recommended for new designs.
Please see
FM25V05.

512K bit Ferroelectric Nonvolatile RAM
• Organized as 65,536 x 8 bits
• Unlimited Read/Write Cycles
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• Low Voltage Operation 3.0V – 3.6V
• 20 μA Standby Current

Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS TDFN Package
• Footprint Compatible with SOIC-8

Ordering Information
• FM25L512-DG 8-pin “Green”/RoHS TDFN

Product Quick View
Density: 512Kb
IDD@max: 12mA
Max. Speed: 20MHz
Package: TDFN8
Vdd: 3.0-3.6V
Available Documents
Datasheets:
Application Notes:
Materials of Design & Construction Documents:
Materials of Design & Construction Documents:
Materials of Design & Construction Documents:
RoHS compliant
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